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The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature

✍ Scribed by K. Lee; T.H. Myers

Book ID
107453561
Publisher
Springer US
Year
2007
Tongue
English
Weight
189 KB
Volume
36
Category
Article
ISSN
0361-5235

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Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 Γ„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign