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The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy

✍ Scribed by Yu, Zhonghai; Buczkowski, S. L.; Giles, N. C.; Myers, T. H.; Richards-Babb, M. R.


Book ID
121530837
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
327 KB
Volume
69
Category
Article
ISSN
0003-6951

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Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 Γ„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign