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Modification of the theory of threshold voltage shift of MOS transistors by ion implantation

โœ Scribed by Runge, H.

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
409 KB
Volume
30
Category
Article
ISSN
0031-8965

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๐Ÿ“œ SIMILAR VOLUMES

Adjustment of threshold voltage of MOS d
Adjustment of threshold voltage of MOS devices by ion implantation
โœ G.S. Virdi; S. Singh; B.C. Pathak; W.S. Khokle ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 486 KB

In this paper we report the effect of oxide thickness, implant energy and dose on threshold voltage shift/k VT. The implant parameters e.g. stopping power, projected range, straggle and the energy loss per micron for an ion in the substrate lattice are calculated using WHB potential. The junction de