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Threshold shift of p-channel transistors by boron implantation and the C-V characteristics of the corresponding mos structures

✍ Scribed by R.C.Y. Fang

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 547 KB
Volume: 26
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(83)90157-0

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