Threshold shift of p-channel transistors by boron implantation and the C-V characteristics of the corresponding MOS structures: R. C. Y. Fang. Solid-St. Electron.26 (1), 25 (1983)

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 81 KB
• Volume: 23
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(83)91152-6