Adjustment of threshold voltage of MOS devices by ion implantation

✍ Scribed by G.S. Virdi; S. Singh; B.C. Pathak; W.S. Khokle

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 486 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(88)80182-4

✦ Synopsis

In this paper we report the effect of oxide thickness, implant energy and dose on threshold voltage shift/k VT. The implant parameters e.g. stopping power, projected range, straggle and the energy loss per micron for an ion in the substrate lattice are calculated using WHB potential. The junction depth beneath the oxide semiconductor surface is calculated using a two layer model. The parameters are then used in theoretical calculation of threshold shift of MOS devices. Experimental threshold voltages for unimplanted and implanted samples were obtained from C-V plots, showing fairly good agreement with theory 9