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Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices

✍ Scribed by Chung-Hao Fu; Kuei-Shu Chang-Liao; Tien-Ko Wang; W.F. Tsai; C.F. Ai

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 515 KB
Volume: 87
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.12.082

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