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Modification of silicon waveguide structures using ion implantation induced defects

โœ Scribed by A.P. Knights; K.J. Dudeck; W.D. Walters; P.G. Coleman


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
313 KB
Volume
255
Category
Article
ISSN
0169-4332

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โœ M.A. Gad; J.H. Evans-Freeman ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 166 KB

High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 โ€ข 10 10 cm ร€2 . The low dose ens