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6169. Modification of silicon structure during highly intensive Ar+ ion implantation


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
192 KB
Volume
36
Category
Article
ISSN
0042-207X

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Study of structure and surface modificat
โœ Rucha H. Polji; A.D. Yadav; S.K. Dubey; P. Kumar; D. Kanjilal ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 683 KB

Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (โ‰ฅ 1 ร— 10 17 ions-cm -2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR an