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Modelling of anisotropic etching in silicon-based sensor application

✍ Scribed by H. Camon; A.M. Gue; J.S. Danel; M. Djafari-Rouhani

Book ID: 108028144
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 226 KB
Volume: 33
Category: Article
ISSN: 0924-4247
DOI: 10.1016/0924-4247(92)80237-w

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## Abstract Anisotropic nanostructuring of bulk silicon (Si) wafers leads to a significant in‐plane optical anisotropy of single porous silicon (PSi) layers. Additionally a variation of the etching current in time allows a controlled modification of the porosity along the growth direction and there