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Modeling the temperature response of 4H silicon carbide junction field-effect transistors

✍ Scribed by Scozzie, C. J.; McLean, F. B.; McGarrity, J. M.

Book ID: 121529540
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 265 KB
Volume: 81
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.365349

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