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Modeling of thermal oxidation of silicon

โœ Scribed by Singh, Satish K.; Schlup, John R.; Fan, L. T.; Sur, Biswajit

Book ID
126116442
Publisher
American Chemical Society
Year
1988
Tongue
English
Weight
903 KB
Volume
27
Category
Article
ISSN
0888-5885

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This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion,