๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Thermal oxidation of silicon: New experimental results and models

โœ Scribed by Eugene A. Irene; R. Ghez

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
883 KB
Volume
30
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Recent Advances in Models for Thermal Ox
Recent Advances in Models for Thermal Oxidation of Silicon
โœ Krishna Garikipati; Vinay S. Rao ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 706 KB

Recent advances are presented in the models for thermal oxidation that have been been introduced by Rao and co-workers. The level-set formulation for movement of the Si-SiO 2 interface has been improved by the application of an efficient velocityprojection scheme for noninterface points. A penalty f

Thermal ignition of acetonitrile. Experi
Thermal ignition of acetonitrile. Experimental results and kinetic modeling
โœ Assa Lifshitz; Carmen Tamburu; Harvey F. Carroll ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 247 KB ๐Ÿ‘ 2 views

Ignition delay times of acetonitrile (CH 3 CN) in mixtures containing acetonitrile and oxygen diluted in argon were studied behind reflected shock waves. The temperature range covered was at overall concentrations behind the reflected shock wave ranging 1420-1750 K from 2 to mol/cm 3 . Over this tem

On modelling thermal oxidation of Silico
On modelling thermal oxidation of Silicon I: theory
โœ Vinay S. Rao; Thomas J. R. Hughes ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 152 KB

This work focuses on a new mathematical framework to model the process of thermal oxidation in silicon. The mathematical model is derived from the fundamental conservation equations of mechanics. The mass balance law provides the description of the oxidant transport and the Si}SiO interface motion,