𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics

✍ Scribed by Fregonese, S.; Yan Zhuang; Burghartz, J.N.


Book ID
114618870
Publisher
IEEE
Year
2007
Tongue
English
Weight
926 KB
Volume
54
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Impact of Ge content on the gate oxide r
✍ Suresh Uppal; Mehdi Kanoun; John B. Varzgar; Sanatan Chattopadhyay; Sarah Olsen; πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 307 KB

In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had pol

Effects of oxygen partial pressure on st
✍ K.K.S. Curreem; P.F. Lee; J.Y. Dai πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 580 KB

Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al ΒΌ 1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si 83 Ge 17 by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfA