✦ LIBER ✦
Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model
✍ Scribed by Halkias, G.; Vegiri, A.
- Book ID
- 114537493
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 180 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9383
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