𝔖 Bobbio Scriptorium

✦ LIBER ✦

Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

✍ Scribed by Fossum, J.G.; Weimin Zhang

Book ID: 114617065
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 552 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.812491

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

✍ Krishnan, S.; Kwon, U.; Moumen, N.; Stoker, M.W.; Harley, E.C.T.; Bedell, S.; Na 📂 Article 📅 2011 🏛 IEEE ⚖ 950 KB

[IEEE 8th IEEE International Symposium o

[IEEE 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications - Glasgow, UK (13-14 Nov. 2000)] 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) - Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors

✍ Polleux, J.L.; Rumelhard, C. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 466 KB