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Modeling of Degradation Effects on the High Frequency Noise of Metal–Oxide–Semiconductor Field-Effect Transistors

✍ Scribed by Teng, Heng-Fa; Jang, S.-L.; Juang, M.-H.


Book ID
126887831
Publisher
Institute of Pure and Applied Physics
Year
2005
Tongue
English
Weight
245 KB
Volume
44
Category
Article
ISSN
0021-4922

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