Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

✍ Scribed by Wong, H.; Cheng, Y.C.

• Book ID: 114534448
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 668 KB
• Volume: 38
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.119029