✦ LIBER ✦

Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors

✍ Scribed by Choi, Woo Young

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interface states in metal-oxide-semicond

✍ C. Séquin; E. Baldinger 📂 Article 📅 1970 🏛 Elsevier Science 🌐 English ⚖ 908 KB

GaN enhancement mode metal-oxide semicon

✍ Y. Irokawa; Y. Nakano; M. Ishiko; T. Kachi; J. Kim; F. Ren; B. P. Gila; A. H. On 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 97 KB

Integrated metal-Langmuir-semiconductor

✍ G.L. Larkins Jr.; C.D. Fung; S.E. Rickert 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 954 KB

SiGe optoelectronic metal-oxide semicond

✍ Okyay, Ali K.; Pethe, Abhijit J.; Kuzum, Duygu; Latif, Salman; Miller, David A.; 📂 Article 📅 2007 🏛 Optical Society of America 🌐 English ⚖ 427 KB

Reliability study on rapid thermal proce

✍ S.K. Lee; Y.H. Ku; D.L. Kwong; C.-O. Lee 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 325 KB

Silicon nanowire tunneling field-effect

✍ BjoÌrk, M. T.; Knoch, J.; Schmid, H.; Riel, H.; Riess, W. 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 461 KB