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Silicon nanowire tunneling field-effect transistors

✍ Scribed by Björk, M. T.; Knoch, J.; Schmid, H.; Riel, H.; Riess, W.


Book ID
120194328
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
461 KB
Volume
92
Category
Article
ISSN
0003-6951

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High Performance Silicon Nanowire Field
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Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n