๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Model of silicon epitaxial growth in SiCl4-HCl-H2 system based on flow graph

โœ Scribed by Jacek Korec


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
685 KB
Volume
46
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Themodynamic Approach to Diffusion-Contr
โœ Dr.-Ing. W. J. Riedl ๐Ÿ“‚ Article ๐Ÿ“… 1972 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 827 KB

Treatment of diffusion-controlled chemical vapour deposition (CDV) usually neglects supersaturation a t the gas-solid interface, which is the basic condition for crystal growth. A new approach based on metastable equilibria and on the concept of activit,y, taking into account departure from equilibr