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Model and Performance Evaluation of Field-Effect Transistors Based on Epitaxial Graphene on SiC

✍ Scribed by Cheli, M.; Michetti, P.; Iannaccone, G.

Book ID
114620061
Publisher
IEEE
Year
2010
Tongue
English
Weight
531 KB
Volume
57
Category
Article
ISSN
0018-9383

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## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r