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Doping effect on shift of threshold voltage of graphene-based field-effect transistors

✍ Scribed by Guo, B.; Fang, L.; Zhang, B.; Gong, J.R.

Book ID: 118214370
Publisher: The Institution of Electrical Engineers
Year: 2011
Tongue: English
Weight: 179 KB
Volume: 47
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el.2011.0770

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