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MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2.

✍ Scribed by Oh-Shim Joo; Kwang-Deog Jung; Sung-Hoon Cho; Je-Hong Kyoung; Chang-Kyu Ahn; Seung-Chul Choi; Yongkwan Dong; Hoseop Yun; Sung-Hwan Han


Publisher
John Wiley and Sons
Year
2003
Weight
69 KB
Volume
34
Category
Article
ISSN
0931-7597

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ChemInform Abstract: Deposition of Thin
✍ Graeme A. Horley; Mike R. Lazell; Paul O'Brien πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 33 KB πŸ‘ 2 views

Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt 2 ) 3 , by Aerosol-Assisted CVD. -The novel liquid gallium monothiocarbamato complex (III) is utilized as a single-source precursor for the deposition of face-centered cubic GaS films on glass substra