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MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

✍ Scribed by O.-S. Joo; K.-D. Jung; S.-H. Cho; J.-H. Kyoung; C.-K. Ahn; S.-C. Choi; Y. Dong; H. Yun; S.-H. Han

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 212 KB
Volume: 8
Category: Article
ISSN: 0948-1907
DOI: 10.1002/1521-3862(20021203)8:6<273::aid-cvde273>3.0.co;2-o

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