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Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

โœ Scribed by P.A.W.E Verleg; J.I Dijkhuis

Book ID
117148935
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
66 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,