✦ LIBER ✦

Capacitance studies of deep defects in hydrogenated amorphous silicon

✍ Scribed by J. David Cohen

Book ID: 115987053
Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 429 KB
Volume: 114
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(89)90593-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Junction capacitance studies of deep def

Junction capacitance studies of deep defects in undoped hydrogenated amorphous silicon

✍ J.D. Cohen; A.V. Gelatos; K.K. Mahavadi; K. Zellama 📂 Article 📅 1988 🏛 Elsevier Science ⚖ 630 KB

Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,

New results using capacitance transient

New results using capacitance transient studies to investigate deep defect relaxation in hydrogenated amorphous silicon

✍ Daewon Kwon; Adam Gardner; J.David Cohen 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 437 KB

Mobility fluctuations in hydrogenated am

Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

✍ P.A.W.E Verleg; J.I Dijkhuis 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 66 KB

Capacitance studies of ion-implanted n-t

Capacitance studies of ion-implanted n-type hydrogenated amorphous silicon

✍ Carol E. Michelson; J. David Cohen; James P. Harbison 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 186 KB

Capacitance voltage studies of hydrogena

Capacitance voltage studies of hydrogenated amorphous silicon thin film transistors

✍ A.R. Hepburn; C. Pickup; J.M. Marshall; W.I. Milne; F. Clough 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 211 KB

Metastable defects in hydrogenated amorp

Metastable defects in hydrogenated amorphous silicon

✍ S C Agarwal 📂 Article 📅 1997 🏛 Springer-Verlag 🌐 English ⚖ 343 KB