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Capacitance studies of ion-implanted n-type hydrogenated amorphous silicon

✍ Scribed by Carol E. Michelson; J. David Cohen; James P. Harbison


Book ID
115986036
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
186 KB
Volume
97-98
Category
Article
ISSN
0022-3093

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Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,