New results using capacitance transient studies to investigate deep defect relaxation in hydrogenated amorphous silicon

✍ Scribed by Daewon Kwon; Adam Gardner; J.David Cohen

• Book ID: 115990936
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 437 KB
• Volume: 198-200
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/0022-3093(95)00753-9