Mixing of Cr and Si atoms induced by noble gas ions irradiation of Cr/Si bilayers
✍ Scribed by S. Tobbeche; A. Boukhari; R. Khalfaoui; A. Amokrane; C. Benazzouz; A. Guittoum
- Book ID
- 113823504
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 364 KB
- Volume
- 269
- Category
- Article
- ISSN
- 0168-583X
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Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter