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Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

✍ Scribed by M. Novaković; K. Zhang; M. Popović; N. Bibić; H. Hofsäss; K.P. Lieb

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
562 KB
Volume
269
Category
Article
ISSN
0168-583X

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Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter