Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers

✍ Scribed by S. Dhar; M. Milosavljevic; N. Bibic; K.P. Lieb

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 128 KB
• Volume: 222
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200011)222:1<295::aid-pssb295>3.0.co;2-e

✦ Synopsis

Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi 2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.