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Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?

✍ Scribed by V. Milinović; N. Bibić; K.P. Lieb; M. Milosavljević; F. Schrempel

Book ID: 103861870
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 162 KB
Volume: 257
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2007.01.063

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✦ Synopsis

Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV 40 Ar, 180 keV 86 Kr and 250 keV 132 Xe ions, either singly and multiply charged (Ar 8+ , Kr 11+ , Xe 17+ ). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar 8+ than for Ar 1+ irradiation.

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