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Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation

✍ Scribed by Dhar, S.; Milosavljevic, M.; Bibic, N.; Lieb, K. P.


Book ID
121658342
Publisher
The American Physical Society
Year
2001
Tongue
English
Weight
107 KB
Volume
65
Category
Article
ISSN
1098-0121

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Mixing and Silicide Formation during Xe-
✍ S. Dhar; M. Milosavljevic; N. Bibic; K.P. Lieb πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 128 KB

Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5Β±2) Γ‚ 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter