𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures

✍ Scribed by R. Sewell; C. A. Musca; J. M. Dell; L. Faraone; K. Józwikowski; A. Rogalski

Book ID
107452928
Publisher
Springer US
Year
2003
Tongue
English
Weight
570 KB
Volume
32
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain relaxation in AlN/GaN heterostruc
Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between