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Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers

✍ Scribed by M. Carmody; D. Lee; M. Zandian; J. Phillips; J. Arias


Book ID
107452936
Publisher
Springer US
Year
2003
Tongue
English
Weight
440 KB
Volume
32
Category
Article
ISSN
0361-5235

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## Abstract The in‐plane lattice parameters of InN, GaN and Al~2~O~3~ in a InN/GaN/Al~2~O~3~(0001) heterostructure have been measured as a function of temperature in the range of 25–350 Β°C, using high resolution X‐ray diffraction. The results reveal that both the GaN and InN crystals follow the in‐