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A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85AsGaAs grown by chemical beam epitaxy

✍ Scribed by R. Beanland; M. Aindow; T.B. Joyce; P. Kidd; M. Lourenço; P.J. Goodhew


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
949 KB
Volume
149
Category
Article
ISSN
0022-0248

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