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Microwave Plasma Etching

โœ Scribed by Suzuki, Keizo; Okudaira, Sadayuki; Sakudo, Noriyuki; Kanomata, Ichiro


Book ID
125534610
Publisher
Institute of Pure and Applied Physics
Year
1977
Tongue
English
Weight
809 KB
Volume
16
Category
Article
ISSN
0021-4922

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Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize