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Microwave plasma etching

โœ Scribed by Keizo Suzuki; Ken Ninomiya; Shigeru Mishimatsu


Book ID
103469121
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
496 KB
Volume
34
Category
Article
ISSN
0042-207X

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Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize