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4462863 Microwave plasma etching

โœ Scribed by Shiger Nishimatsu; Keizo Suzuki; Ken Ninomiya; Ichiro Kanomata

Book ID
103463223
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
85 KB
Volume
35
Category
Article
ISSN
0042-207X

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Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize