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Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

✍ Scribed by Mishra, U.K.; Brown, A.S.; Rosenbaum, S.E.; Hooper, C.E.; Pierce, M.W.; Delaney, M.J.; Vaughn, S.; White, K.


Book ID
120793207
Publisher
IEEE
Year
1988
Tongue
English
Weight
224 KB
Volume
9
Category
Article
ISSN
0741-3106

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Microwave performance and reliability ev
✍ M. Nawaz; W. Strupinski; J. Stenarson; S. H. M. Persson; H. Zirath πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 289 KB

We report on the microwa¨e performance and reliability e¨aluation of AlInAsrGaInAsrInP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers pro¨ide high threshold ¨oltage uniformity, and less thermal and bias stress degradation compared to con¨ent