Fabrication and performance of 0.1-μm gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz

✍ Scribed by Lepore, A.; Levy, M.; Lee, H.; Kohn, E.; Radulescu, D.; Tiberio, R.; Tasker, P.; Eastman, L.

• Book ID: 114538445
• Publisher: IEEE
• Year: 1988
• Tongue: English
• Weight: 294 KB
• Volume: 35
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.8859