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Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC

✍ Scribed by Haifeng Sun, ; Alt, A R; Benedickter, H; Feltin, E; Carlin, J; Gonschorek, M; Grandjean, N; Bolognesi, C R

No coin nor oath required. For personal study only.

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