High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

✍ Scribed by Jessen, G.H.; Fitch, R.C.; Gillespie, J.K.; Via, G.D.; Moser, N.A.; Yannuzzi, M.J.; Crespo, A.; Sewell, J.S.; Dettmer, R.W.; Jenkins, T.J.; Davis, R.F.; Yang, J.; Khan, M.A.; Binari, S.C.

• Book ID: 120480776
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 233 KB
• Volume: 24
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2003.818816