Recessed 0.25 [micro sign]m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE

✍ Scribed by Kumar, V.; Lu, W.; Khan, F.A.; Schwindt, R.; Piner, E.; Adesida, I.

• Book ID: 121478758
• Publisher: The Institution of Electrical Engineers
• Year: 2001
• Tongue: English
• Weight: 393 KB
• Volume: 37
• Category: Article
• ISSN: 0013-5194
• DOI: 10.1049/el:20010999