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Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs

✍ Scribed by M. Nawaz; W. Strupinski; J. Stenarson; S. H. M. Persson; H. Zirath

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 289 KB
Volume: 20
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(19990320)20:6<357::aid-mop2>3.0.co;2-h

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✦ Synopsis

We report on the microwa¨e performance and reliability e¨aluation of AlInAsrGaInAsrInP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers pro¨ide high threshold ¨oltage uniformity, and less thermal and bias stress degradation compared to con¨entional AlInAsrGaInAsrInP HEMTs. A cutoff frequency f of 53 GHz and maximum frequency f T m a x of 210 GHz for a 0.4 m gate de¨ice is obtained.

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