✦ LIBER ✦

Microwave performance of InP-based HEMTs for low-voltage application

✍ Scribed by S. Strähle; B. Henle; L. Lee; H. Künzel; T. Hackbarth; J. Dickmann; E. Kohn

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 734 KB
Volume: 11
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(19960220)11:3<131::aid-mop6>3.0.co;2-m

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✦ Synopsis

InP-based

📜 SIMILAR VOLUMES

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## Abstract A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The dependence of mobility on carrier concentration affects the current–voltage characteristics, and also the gate–voltage dependenc

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