𝔖 Bobbio Scriptorium

✦ LIBER ✦

Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology

✍ Scribed by U. Mishra; J. Jensen; A. Brown; M. Thompson; L. Jelloian; R. Beaubien

Book ID: 126638169
Publisher: IEEE
Year: 1988
Tongue: English
Weight: 342 KB
Volume: 9
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.6952

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Microwave performance of AlInAs-GaInAs H

Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

✍ Mishra, U.K.; Brown, A.S.; Rosenbaum, S.E.; Hooper, C.E.; Pierce, M.W.; Delaney, 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 224 KB

[IEEE Proceedings., IEEE/Cornell Confere

[IEEE Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1989)] Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Very high performance 0.15 mu m gate-length InAlAs/InGaAs/InP lattice-matched HEMTs

✍ Tessmer, A.J.; Chao, P.C.; Duh, K.H.G.; Ho, P.; Kao, M.Y.; Liu, S.M.J.; Smith, P 📂 Article 📅 1989 🏛 IEEE ⚖ 336 KB