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[IEEE Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1989)] Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Very high performance 0.15 mu m gate-length InAlAs/InGaAs/InP lattice-matched HEMTs

✍ Scribed by Tessmer, A.J.; Chao, P.C.; Duh, K.H.G.; Ho, P.; Kao, M.Y.; Liu, S.M.J.; Smith, P.M.; Ballingall, J.M.; Jabra, A.A.; Yu, T.H.

Book ID: 115502978
Publisher: IEEE
Year: 1989
Weight: 336 KB
Volume: 0
Category: Article
DOI: 10.1109/cornel.1989.79821

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