## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,
โฆ LIBER โฆ
Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
โ Scribed by Khan, M.A.; Chen, Q.; Yang, J.W.; Shur, M.S.; Dermott, B.T.; Higgins, J.A.
- Book ID
- 120819155
- Publisher
- IEEE
- Year
- 1996
- Tongue
- English
- Weight
- 265 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0741-3106
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